TITLE

Optical monitoring of the growth of heavily doped GaAs by chemical beam epitaxy and of the in

AUTHOR(S)
Joyce, T.B.; Bullough, T.J.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2193
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Details the in situ optical monitoring of the growth of heavily doped gallium arsenide by chemical beam epitaxy. Use of dynamic optical reflectivity to monitor normal incidence reflectance of a 670 nm semiconductor laser; Observation of oscillations in the reflectance of the growing film; Detection of a reduction in growth rate.
ACCESSION #
4221619

 

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