Optical monitoring of the growth of heavily doped GaAs by chemical beam epitaxy and of the in

Joyce, T.B.; Bullough, T.J.
October 1994
Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2193
Academic Journal
Details the in situ optical monitoring of the growth of heavily doped gallium arsenide by chemical beam epitaxy. Use of dynamic optical reflectivity to monitor normal incidence reflectance of a 670 nm semiconductor laser; Observation of oscillations in the reflectance of the growing film; Detection of a reduction in growth rate.


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