TITLE

Nondestructive mapping of carrier concentration and dislocation density ni n[sub +]-type GaAs

AUTHOR(S)
Look, D.C.; Walters, D.C.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2188
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the nondestructive mapping of carrier concentration and dislocation density in n[sup +]-type GaAs. Correlation of transition mappings with carrier concentration; Variation in absorption via free-carrier interconduction-band transitions; Usefulness of the phenomena for n[sup +]-GaAs wafer characterization.
ACCESSION #
4221617

 

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