Nondestructive mapping of carrier concentration and dislocation density ni n[sub +]-type GaAs

Look, D.C.; Walters, D.C.
October 1994
Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2188
Academic Journal
Demonstrates the nondestructive mapping of carrier concentration and dislocation density in n[sup +]-type GaAs. Correlation of transition mappings with carrier concentration; Variation in absorption via free-carrier interconduction-band transitions; Usefulness of the phenomena for n[sup +]-GaAs wafer characterization.


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