TITLE

Nanocrystal size modifications in porous silicon by preanodization ion implantation

AUTHOR(S)
Pavesi, L.; Giebel, G.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2182
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the nanocrystal size modifications in porous silicon by preanodization ion implantation. Methods used to determine the structure of porous silicon samples; Observation of a porosity increase, a blue shift of the luminescence peak and a widening of the phonon resonance; Effect of the increased resistivity of the silicon wafer on the process.
ACCESSION #
4221615

 

Related Articles

  • Ion implantation of porous silicon. Peng, C.; Fauchet, P.M.; Rehm, J.M.; McLendon, G.L.; Seiferth, F.; Kurinec, S.K. // Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1259 

    Investigates the ion implantation of porous silicon (Si). Properties of light-emitting Si; Application of continuous-wave and time dependent photoluminescence spectroscopies; Comparison of dopant implantation effect in varying doses.

  • Ion implantation of porous gallium phosphide. Ushakov, V. V.; Dravin, V. A.; Mel�nik, N. N.; Zavaritskaya, T. V.; Loiko, N. N.; Karavanskii, V. A.; Konstantinova, E. A.; Timoshenko, V. Yu. // Semiconductors;Aug98, Vol. 32 Issue 8, p886 

    The effect of irradiation by Ar ions and thermal annealing on the properties of porous gallium phosphide (por-GaP) obtained by electrolytic methods is investigated. It is shown on the basis of Raman scattering and photoluminescence data that, in contrast with porous silicon, por-GaP does not...

  • Control of porous silicon luminescent pattern formation by ion implantation. Xi-Mao Bao; Hai-Qiang Yang // Applied Physics Letters;10/18/1993, Vol. 63 Issue 16, p2246 

    Examines the control of luminescent pattern formation in porous silicon (Si). Amorphization of crystal Si by self-implantation; Comparison between the luminescence in the crystal and preamorphized regions; Effects of anodization on porous Si.

  • Giant Third-Harmonic in Porous Silicon Photonic Crystals and Microcavities. Dolgova, T. V.; Maıdykovski, A. I.; Martemyanov, M. G.; Fedyanin, A. A.; Aktsipetrov, O. A. // JETP Letters;1/10/2002, Vol. 75 Issue 1, p15 

    A giant enhancement (no less than by 10[sup 3]) of the optical third-harmonic generation in one-dimensional porous silicon microcavities and photonic crystals was observed experimentally. The enhancement is due to the resonant enhancement of the fundamental field in the cavity mode and the...

  • Modeling of optical charging spectroscopy investigation of trapping phenomena in nanocrystalline porous silicon. Iancu, Vladimir; Ciurea, Magdalena Lidia; Draghici, Mihai // Journal of Applied Physics;7/1/2003, Vol. 94 Issue 1, p216 

    A model for trapping phenomena in nanocrystalline silicon investigated by the optical charging spectroscopy method is proposed. The model takes into account all the possible contributions to the discharge current. The results previously obtained on fresh and passivated porous silicon samples are...

  • Intense blue-light emission from carbon-plasma-implanted porous silicon. Liu, Weili; Zhang, Miao; Lin, Chenglu; Zeng, Zhaoming; Wang, Lianwei; Chu, Paul K. // Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p37 

    We have investigated the room-temperature photoluminescence (PL) characteristics of porous-silicon plasma implanted with carbon. Before implantation, the porous silicon made by anodizing emits intense orange light. After carbon-plasma-immersion ion implantation, the orange light disappears and...

  • Optical properties of erbium-implanted porous silicon microcavities. Reece, P.J.; Gal, M.; Tan, H.H.; Jagadish, C. // Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3363 

    We have used ion implantation for erbium doping of mesoporous silicon microcavities. Optically active erbium-doped microcavities with Q factors in excess of 1500 have been demonstrated. We observed strong modification of the emission properties of the erbium in the microcavity with an...

  • Long-range gettering of microdefects in silicon single crystals during the formation of porous silicon layers on their surface and ion irradiation. Perevoshchikov, V. A.; Skupov, V. D. // Technical Physics Letters;Apr99, Vol. 25 Issue 4, p315 

    Experimemal data on the dissolution of microdefects in the near-surface regions of silicon single crystals during the electrochemical formation of porous silicon layers followed by argonion irradiation are presented. A decrease in the microdefect concentration is detected near the interface with...

  • Origin of the green/blue luminescence from nanocrystalline silicon. Tamura, Hideki; Ruckschloss, Markus // Applied Physics Letters;9/19/1994, Vol. 65 Issue 12, p1537 

    Investigates the origin of a green/blue photoluminescence in oxidized nanocrystalline and porous silicon. Information on the photoluminescence spectra of several silicon oxide glasses; Impact of air exposure at room temperature on a heavily oxidized sample; Effects of isochronal annealing on...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics