Electrical properties of thermal oxide grown using dry oxidation on p-type 6H-silicon carbide

Alok, Dev; McLarty, P.K.
October 1994
Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2177
Academic Journal
Investigates the electrical properties of thermal oxides grown on p-type 6H-silicon carbide. Presence of a large positive charge in the oxide; Measurement of the interface state density and effective charge density; Existence of negative bias stress instability and slow trapping.


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