Preparation of crystallographically aligned layers of silicon carbide by pulsed laser deposition

Rimai, L.; Ager, R.
October 1994
Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2171
Academic Journal
Describes the preparation of crystallographically aligned layers of silicon carbide (SiC) by pulsed laser deposition of carbon into silicon wafers. Similarity of the crystalline orientation of the SiC films and substrates; Indication of the film growth on the Si substrate; Formation of a carbon layer for continued deposition beyond the 4000 A thickness.


Related Articles

  • Linear dependence of both the hardness and the elastic modulus of pulsed laser deposited a-SiC... El Khakani, M.A.; Chaker, M.; O'Hern, M. E.; Oliver, W. C. // Journal of Applied Physics;11/1/1997, Vol. 82 Issue 9, p4310 

    Discusses the pulsed laser deposition of amorphous a-silicon carbide (SC) films onto either Si(100) or fused quart substrates. Determination of hardness and elastic modulus mechanical properties by nanoindentation; Formation of Si-C bonds by increasing the substrate deposition temperature;...

  • Adherent SiC coatings on Ni-Cr alloys with a composition-graded intermediate layer. Hou, Q.R.; Gao, J.; Li, S.J. // Applied Physics A: Materials Science & Processing;1998, Vol. 67 Issue 3, p367 

    Abstract. Adherent silicon carbide coatings with a composition-graded intermediate layer were deposited on nickel-chromium alloys by a pulsed laser deposition method. A Ni-Cr alloy/silicon carbide target constructed from a Ni-Cr alloy sector and a silicon carbide disc to give one-to-one...

  • Correlation of structural and electrical transport properties in hydrogenated silicon films. Barreca, F.; Fazio, E.; Neri, F.; Trusso, S.; Vasi, C. // AIP Conference Proceedings;2000, Vol. 513 Issue 1, p23 

    In this work we report on the correlation between the structural properties, i.e., crystalline/amorphous phase ratio and grain size, and the electrical transport properties of hydrogenated silicon thin films. The samples were deposited by means of pulsed laser ablation of a high purity silicon...

  • Bonding configurations and optical band gap for nitrogenated amorphous silicon carbide films prepared by pulsed laser ablation. Trusso, S.; Barreca, F.; Neri, F. // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2485 

    SiC[sub χ]N[sub y] thin films have been deposited by ablating a sintered silicon carbide target in a controlled nitrogen atmosphere. The structural and the optical properties of the films were investigated by x-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry. The nitrogen...

  • Fabrication and characterization of pulse laser deposited Ni[sub 2]Si Ohmic contacts on n-SiC for high power and high temperature device applications. Cole, M. W.; Joshi, P. C.; Ervin, M. // Journal of Applied Physics;4/15/2001, Vol. 89 Issue 8 

    Ni[sub 2]Si Ohmic contacts were fabricated via pulsed laser deposition on n-SiC. The contacts electrical, structural, compositional, and surface morphological properties were investigated as a function of annealing temperatures ranging from 700 to 950 °C. The as-deposited and 700 °C...

  • Pulsed laser deposition of silicon carbide at room temperature. Capano, M.A.; Walck, S.D. // Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3413 

    Details the pulsed laser deposition of silicon carbide (SiC) films at room temperature. Ablation of a 6H-SiC target using radiation from the krypton fluoride excimer laser; Observation of the Si 2p peaks; Shift in binding energy revealed by the scans of the C 1s peak; Equivalence of the...

  • Control of polytype formation in silicon carbide heteroepitaxial films by pulsed-laser deposition. Kusumori, Takeshi; Muto, Hachizo; Brito, Manuel E. // Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1272 

    Control of silicon carbide (SiC) polytype formation has been achieved. 3C, 2H, and 4H SiC heteroepitaxial films are fabricated on a sapphire (0001) substrate at a low temperature of 1100 °C using a pulsed-laser deposition (PLD) method. Images made by transmission electron microscopy clearly...

  • Epitaxial growth of M-type Ba-hexaferrite films on MgO (111)∥SiC (0001) with low ferromagnetic resonance linewidths. Chen, Zhaohui; Yang, Aria; Gieler, Antone; Harris, V. G.; Vittoria, C.; Ohodnicki, P. R.; Goh, K. Y.; McHenry, M. E.; Cai, Zhuhua; Goodrich, Trevor L.; Ziemer, Katherine S. // Applied Physics Letters;10/29/2007, Vol. 91 Issue 18, p182505 

    Barium hexaferrite (BaM) films were deposited on 10 nm MgO (111) films on 6H silicon carbide (0001) substrates by pulsed laser deposition from a homogeneous BaFe12O19 target. The MgO layer, deposited by molecular beam epitaxy, alleviated lattice mismatch and interdiffusion between film and...

  • Elastic properties of β-SiC films by Brillouin light scattering. Djemia, Philippe; Roussigné, Yves; Dirras, Guy F.; Jackson, Kamili M. // Journal of Applied Physics;3/1/2004, Vol. 95 Issue 5, p2324 

    Brillouin light scattering has been used to investigate elastic properties of a monocrystalline and of <111> textured polycrystalline 3C polytype silicon carbide films that have been deposited on silicon substrate by chemical vapor deposition. Taking advantage from the detection of different...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics