TITLE

Preparation of crystallographically aligned layers of silicon carbide by pulsed laser deposition

AUTHOR(S)
Rimai, L.; Ager, R.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2171
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the preparation of crystallographically aligned layers of silicon carbide (SiC) by pulsed laser deposition of carbon into silicon wafers. Similarity of the crystalline orientation of the SiC films and substrates; Indication of the film growth on the Si substrate; Formation of a carbon layer for continued deposition beyond the 4000 A thickness.
ACCESSION #
4221611

 

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