Low resistance ohmic contacts on nitrogen ion bombarded InP

Ren, F.; Pearton, S.J.
October 1994
Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2165
Academic Journal
Describes low resistance ohmic contacts on nitrogen ion bombarded indium phosphide (InP). Use of acceleration voltages of 100-300 V and exposure times of 3-1 minutes; Removal of InP native oxide and production of a shallow disordered donor layer; Identification of electron diffraction patterns.


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