TITLE

Ga[sub x]In[sub 1-x]As/AlAs resonant tunneling diodes grown by atmospheric pressure metalorganic

AUTHOR(S)
Keller, B.P.; Yen, J.C.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2159
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Details the growth of Ga[sub x]In[sub 1-x]As/AlAs resonant tunneling diodes by atmospheric pressure metalorganic chemical vapor deposition. Use of high-resolution x-ray diffraction measurements; Evaluation of the heterostructure interface quality; Valley ratio of the resonant tunneling diodes.
ACCESSION #
4221607

 

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