Direct growing of lightly doped epitaxial silicon without misfit dislocation on heavily

Ho-Jun Lee; Chang-Soo Kim
October 1994
Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2139
Academic Journal
Demonstrates direct growing of lightly doped epitaxial silicon without misfit dislocation on heavily boron-doped silicon layer. Use of X-ray diffraction analysis; Crystallinity of the heavily boron-doped layer; Measurement of the leakage current of an n[sup +]lp diode fabricated in the epitaxial silicon substrate.


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