TITLE

Direct growing of lightly doped epitaxial silicon without misfit dislocation on heavily

AUTHOR(S)
Ho-Jun Lee; Chang-Soo Kim
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2139
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates direct growing of lightly doped epitaxial silicon without misfit dislocation on heavily boron-doped silicon layer. Use of X-ray diffraction analysis; Crystallinity of the heavily boron-doped layer; Measurement of the leakage current of an n[sup +]lp diode fabricated in the epitaxial silicon substrate.
ACCESSION #
4221600

 

Related Articles

  • Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54.... Ni, W.-X.; Joelsson, K.B. // Applied Physics Letters;6/23/1997, Vol. 70 Issue 25, p3383 

    Examines the use of erbium with oxygen or fluorine as co-dopants of silicon during molecular beam epitaxy. Use of co-evaporation of silicon and erbium containing compounds; Level of erbium doping concentration using Er[sub 2]O[sub 3] and ErF[sub 3] without precipitation; Growth, structural and...

  • Deep levels in Er-doped liquid phase epitaxy grown silicon. Cavallini, A.; Fraboni, B.; Pizzini, S. // Applied Physics Letters;1/26/1998, Vol. 72 Issue 4, p468 

    The optical activity of Er-doped silicon is related to the presence of defects which enhance the typical radiative transition at 0.8 eV but whose nature and properties are still largely unknown. We have investigated the deep levels present in Er-doped liquid phase epitaxy silicon to identify the...

  • Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell. Zheng, H. Q.; Radahakrishnan, K. // Journal of Applied Physics;6/1/2000, Vol. 87 Issue 11, p7989 

    Reports on a study of the electrical and optical properties of silicon-doped InP layers grown by solid-source molecular beam epitaxy using a valved phosphorus cracker cell. Experimental details; Results and discussion; Conclusions.

  • Electron conduction in GaAs atomic layer doped with Si. Makimoto, Toshiki; Kobayashi, Naoki; Horikoshi, Yoshiji // Journal of Applied Physics;5/15/1988, Vol. 63 Issue 10, p5023 

    Focuses on a study which described the electronic transport characteristics of silicon atomic-layer-doped gallium arsenide grown by flowrate modulation epitaxy. Discussion of the parallel conduction model; Interpretation of the activation energy.

  • Electrical properties of silicon and beryllium doped (AlyGa1-y)0.52In0.48P. Najda, Stephen P.; Kean, Alistair; Duggan, Geoffrey // Journal of Applied Physics;11/1/1997, Vol. 82 Issue 9, p4408 

    Studies the electrical properties of silicon and beryllium doped(AlyGa1-y)0.52In0.48P grown by gas source molecular beam epitaxy. Linear increase in the free-carrier concentration; Saturation of the free electron concentration due to Fermi level pinning at the DX level.

  • Effects of donor doping on deep traps in In0.5Ga0.5P grown by liquid phase epitaxy. Kwon, Ho Ki; Kwon, S. D.; Choe, Byung-Doo; Lim, H. // Journal of Applied Physics;12/15/1995, Vol. 78 Issue 12, p7395 

    Presents information on a study which investigated the properties of deep traps in undoped Si-, S-, Se- and Te-doped In[sub0.5] Ga[sub0.5] P layers grown on gallium arsenide substrates by liquid phase epitaxy. Observation of the S-doped layer for deep trap concentration; Deep trap properties in...

  • Deep centers in n-GaN grown by reactive molecular beam epitaxy. Fang, Z-Q.; Look, D. C.; Kim, W.; Fan, Z.; Botchkarev, A.; Morkoc¸, H. // Applied Physics Letters;5/4/1998, Vol. 72 Issue 18 

    Deep centers in Si-doped n-GaN layers grown by reactive molecular beam epitaxy have been studied by deep-level transient spectroscopy as a function of growth conditions. Si-doped GaN samples grown on a Si-doped n[sup +]-GaN contact layer at 800 °C show a dominant trap C[sub 1] with activation...

  • Si diffusion and segregation in low-temperature grown GaAs. Kavanagh, K.L.; Chang, J.C.P.; Kirchner, P.D.; Warren, A.C.; Woodall, J.M. // Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p286 

    Investigates the silicon (Si)-doped low-temperature gallium arsenide (LT-GaAs) semiconductors by molecular beam epitaxy. Use of constant diffusion coefficients; Development of internal Si peaks; Accumulation of As precipitates near the undoped/doped LT-GaAs interface.

  • Highly doped GaAs:Si by molecular beam epitaxy. Sacks, Robert; Shen, H. // Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p374 

    Highly doped (N[sup ++]) GaAs:Si with n up to 1.8 × l0[sup 19] cm[sup -3] has been grown by molecular beam epitaxy at a "normal" growth rate of ∼0.8 m/h[sup -1]. These layers have been studied by Raman spectroscopy, van der Pauw-Hall measurements, and capacitance-voltage plotting. They...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics