1.09-eV Schottky barrier height of nearly ideal Pt/Au contacts directly deposited on n- and

Fricke, A.; Stareev, G.
August 1994
Applied Physics Letters;8/8/1994, Vol. 65 Issue 6, p755
Academic Journal
Examines the fabrication of platinum/gold Schottky contacts on aluminum indium arsenide lattice-matched to indium phosphide. Use of ion-cleaning and postdeposition annealing; Elimination of eventual postbombardment defects; Increase of the Schottky barrier height; Determination of initial breakdown voltage, reverse current density and ideality factor.


Related Articles

  • Schottky barrier height and surface state density of Ni/Au contacts to (NH[sub 4])[sub 2]S[sub x]-treated n-type GaN. Lee, Ching-Ting; Lin, Yow-Jon; Liu, Day-Shan // Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2573 

    By using capacitance–voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH[sub 4])[sub 2]S[sub x] treatment. The Schottky barrier height of 1.099 eV is very close to the...

  • Comment on ‘‘Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights’’ [J. Appl. Phys. 61, 5159 (1987)]. Horváth, Zs. J. // Journal of Applied Physics;7/1/1988, Vol. 64 Issue 1, p443 

    Comments on a study on the engineered Schottky barrier diodes for the modification and control of Schottky barrier heights. Relation between the applied voltage, the built-in potential and the dopant profile; General expression of C-V characteristics; Expression of C-V characteristics through...

  • Model for Schottky barrier and surface states in nanostructured n-type semiconductors. Malagu`, C.; Guidi, V.; Stefancich, M.; Carotta, M. C.; Martinelli, G. // Journal of Applied Physics;1/15/2002, Vol. 91 Issue 2, p808 

    A semiclassical model for Schottky contacts to be applied to nanosized polycrystalline n-type semiconductors was developed. To this purpose we determined the density of surface states as a function of the mean grain radius, which establishes the Schottky barrier height. The intergranular...

  • Environmental aging of Schottky contacts to n-AlGaN. Readinger, E. D.; Luther, B. P.; Mohney, S. E.; Piner, E. L. // Journal of Applied Physics;6/15/2001, Vol. 89 Issue 12, p7983 

    Gold Schottky contacts to n-AlGaN were fabricated, and the influence of the semiconductor surface preparation on the electrical performance of the diodes was examined. More significantly, the electrical characteristics of the diodes were found to be sensitive to the environment in which they...

  • Watt-level millimeter-wave monolithic diode-grid frequency multipliers. Hwu, R. J.; Jou, C. F.; Luhmann, N. C.; Lam, W. W.; Rutledge, D. B.; Hancock, B.; Lieneweg, U.; Maserjian, J.; Streit, D. C. // Review of Scientific Instruments;Aug1988, Vol. 59 Issue 8, p1577 

    Watt-level cw solid-state sources in the millimeter-wave region are needed for plasma diagnostics. Monolithic metal-grid arrays containing in excess of 1000 Schottky diodes have produced watt-level output at 66 GHz in a doubler configuration, in excellent agreement with the large-signal...

  • Control of microscopic superconducting channel by proximity effect. Totsuji, Hiroo // Applied Physics Letters;12/30/1991, Vol. 59 Issue 27, p3628 

    Examines the use of proximity effect in controlling the microscopic superconducting channel. Effects of Schottky barrier on SC[sub 2] semiconductors; Importance of electron beam evaporation in obtaining the superconducting thin layer; Decrease of SC[sub 2] metallic tendency.

  • High-temperature stable MoAl[sub 2.7]/n-GaAs Schottky diodes with enhanced barrier height. Huang, T.S.; Peng, J.G. // Applied Physics Letters;12/21/1992, Vol. 61 Issue 25, p3017 

    Describes the high-temperature stable molybdenum aluminum[sub 2.7] and n-gallium arsenide (GaAs) Schottky diode with enhanced barrier height. Requirement for metal-semiconductor field effect transistor device processing; Benefits of high Schottky barrier height for GaAs digital logic circuit;...

  • High-temperature stable Ir-Al/n-GaAs Schottky diodes. Lalinsky, T.; Gregusova, D. // Applied Physics Letters;4/4/1994, Vol. 64 Issue 14, p1818 

    Examines the thermal stability of iridium-aluminum (Ir-Al)/gallium arsenide Schottky diodes. Dependence of the thermal stability on deposition technique and annealing conditions; Advantages of stable Schottky diodes for making Ir-Al as an attractive metal; Confirmation of the thermal stability...

  • Capacitance decrease due to stress in a Cu-doped, n-type Si Schottky diode. Tōyama, Naotake // Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p892 

    In Au n-type Si Schottky diodes heavily doped with copper, a remarkable decrease in the depletion layer capacitance is frequently observed by applying stress. It was found that the capacitance decrease due to stress was attributed to the change of the copper substitutional species (Cu[sub I])...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics