TITLE

Thermodynamically stable p-channel strained-layer AlGaAs/InGaAs/GaAs heterostructure field

AUTHOR(S)
Baca, A.G.; Zipperian, T.E.
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/8/1994, Vol. 65 Issue 6, p752
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the device characteristics of a thermodynamically stable p-channel, strained quantum well heterostructure field effect transistor (HFET). Fabrication of the p-channel HFET with aluminum and indium mole fractions; Estimation of the transconductances; Comparison to indium gallium arsenide quantum-well, recessed gate pHFET.
ACCESSION #
4221581

 

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