Kinetically controlled order/disorder structure in GaInP

Su, L.C.; Ho, I.H.
August 1994
Applied Physics Letters;8/8/1994, Vol. 65 Issue 6, p749
Academic Journal
Describes the organometallic vapor phase epitaxy growth of an order/disorder gallium indium phosphide heterostructure. Band-gap energy difference of the heterostructure; Composition and lattice match of the two layers; Observation on the antiphase boundaries; Details of the photoluminescence measurements; Use of heterostructures for photonic devices.


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