Growth of high-quality 3C-SiC epitaxial films on off-axis Si(001) substrates at 850 degree C by

Wahab, Q.; Sardela Jr., M.R.
August 1994
Applied Physics Letters;8/8/1994, Vol. 65 Issue 6, p725
Academic Journal
Analyzes the growth of 3 carbon-silicon carbide (3C-SiC) epitaxial films on off-axis silicon substrates by reactive magnetron sputtering. Comparison of the film quality to chemical vapor deposited 3C-SiC; Lattice mismatch and difference in thermal contraction between SiC and Si; Structural defects in SiC film; Details of low-energy ion-surface interactions.


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