TITLE

Ge surface segregation at low temperature during SiGe growth by molecular beam epitaxy

AUTHOR(S)
Godbey, D.J.; Lill, J.V.
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/8/1994, Vol. 65 Issue 6, p711
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes the temperature dependence of germanium surface segregation during growth by solid source silicon germanide molecular beam epitaxy. Application of X-ray photoelectron spectroscopy and kinetic Monte Carlo (KMC) modeling; Persistence of germanium segregation at 60 degrees Celsius; Effectiveness of KMC in describing the temperature segregation.
ACCESSION #
4221567

 

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