Ge surface segregation at low temperature during SiGe growth by molecular beam epitaxy

Godbey, D.J.; Lill, J.V.
August 1994
Applied Physics Letters;8/8/1994, Vol. 65 Issue 6, p711
Academic Journal
Analyzes the temperature dependence of germanium surface segregation during growth by solid source silicon germanide molecular beam epitaxy. Application of X-ray photoelectron spectroscopy and kinetic Monte Carlo (KMC) modeling; Persistence of germanium segregation at 60 degrees Celsius; Effectiveness of KMC in describing the temperature segregation.


Related Articles

  • Role of Surface Segregation in Formation of Abrupt Interfaces in Si/Si[sub 1 � ][sub x]Ge[sub x] Heterocompositions Grown by Molecular-Beam Epitaxy with Combined Sources. Orlov, L. K.; Ivina, N. L. // Semiconductors;Feb2002, Vol. 36 Issue 2, p191 

    The coefficients of segregation of germanium atoms were measured for the Si[sub 1-x]Ge[sub x] system grown by molecular-beam epitaxy with combined Si-GeH[sub 4] sources under the conditions of efficient filling of surface bonds by the products of the decomposition of hydrides. In their turn,...

  • Low-temperature growth of Ge on Si(100). Eaglesham, D.J.; Cerullo, M. // Applied Physics Letters;5/20/1991, Vol. 58 Issue 20, p2276 

    Studies heteroepitaxial molecular beam epitaxial growth of germanium on silicon at low temperatures. Low-temperature limit to growth; Suppression of island formation; Planar growth at all temperatures; Occurrence of strain relaxation of the planar epilayers.

  • Ge(001) gas-source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2H6: Growth kinetics and surface roughening. Bramblett, T. R.; Lu, Q.; Lee, N.-E.; Taylor, N.; Hasan, M.-A.; Greene, J. E. // Journal of Applied Physics;2/15/1995, Vol. 77 Issue 4, p1504 

    Reports on the first growth kinetics and microstructural investigations of germanium (Ge) gas-source molecular beam epitaxy from digermane. Introduction to Ge; Experimental procedure; Results and discussion.

  • Strain relaxation of faceted Ge islands on Si(113). Jian-hong Zhu; Miesner, C. // Applied Physics Letters;10/18/1999, Vol. 75 Issue 16, p2395 

    Studies the strain relaxation of faceted germanium islands on silicon(113) grown by molecular beam epitaxy. Atomic force microscopy (AFM) image of germanium islands; Raman spectra right on a surface germanium island and on the germanium wetting layer; Photoluminescence spectra of the germanium...

  • Surface diffusion length of Ga adatoms on (111)B surfaces during molecular beam epitaxy. Nomura, Y.; Morishita, Y. // Applied Physics Letters;2/28/1994, Vol. 64 Issue 9, p1123 

    Measures the spatial variation of the growth rate on mesa-etched gallium arsenide (GaAs) (111)B surfaces during molecular beam epitaxy. Determination of surface diffusion length of Ga adatoms; Value of the diffusion length; Ways to measure the reflection high-energy electron diffraction intensity.

  • Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer. Nie, Tian-Xiao; Lin, Jin-Hui; Chen, Zhi-Gang; Shao, Yuan-Min; Wu, Yue-Qin; Yang, Xin-Ju; Fan, Yong-Liang; Jiang, Zui-Min; Zou, Jin // Journal of Applied Physics;Dec2011, Vol. 110 Issue 11, p114304 

    A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 °C. After annealing the sample in an oxygen atmosphere at 1000 °C, a structure, namely two layers of quantum dots, was formed...

  • Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular.... Xun Wang; Zui-min Jiang // Applied Physics Letters;12/15/1997, Vol. 71 Issue 24, p3543 

    Investigates the growth of uniform germanium (Ge) dots on silicon(100) using molecular beam epitaxy. Evidence of a peak downward shift of Ge-Ge mode; Impact of phonon confinement on Ge-Ge mode in the Ge dots; Attribution of a photoluminescence peak development to free exciton longitudinal...

  • Low-defect-density germanium on silicon obtained by a novel growth phenomenon. Malta, D.P.; Posthill, J.B. // Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p844 

    Examines the growth of heteroepitaxial germanium on silicon using molecular beam epitaxy. Indication on the localized germanium melting and subsequent silicon local alloying; Creation of dense and confined threading dislocation network; Manifestation of etch pit density measurement.

  • Ge profile from the growth of SiGe buried layers by molecular beam epitaxy. Godbey, D.J.; Ancona, M.G. // Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2217 

    Examines the germanium (Ge) concentration profile of thin Si/SiGe heterostructures using elemental source molecular epitaxy. Interpretation of X-ray photoelectron spectroscopy measurements through kinetic simulation; Factors causing Ge depletion at the leading interface; Effects of Ge rich...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics