TITLE

Se-rich phase of ZnSe(100) predicted by total-energy calculations

AUTHOR(S)
Garcia, Alberto; Northrup, John E.
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/8/1994, Vol. 65 Issue 6, p708
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the relative stability of zinc selenide surface reconstructions using first-principles total energy calculations. Stability of c(2x2) structure in the zinc-rich limit; Surface adoption of a (2x1) selenium-dimer phase; Growth rates in atomic layer epitaxy and migration enhanced epitaxy experiments.
ACCESSION #
4221566

 

Related Articles

  • Homoepitaxial growth of ZnSe on dry-etched substrates. Ohkawa, K.; Karasawa, T.; Yoshida, A.; Hirao, T.; Mitsuyu, T. // Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2553 

    High quality ZnSe layers have been grown by molecular beam epitaxy on dry-etched ZnSe substrates. Surface damage caused by cutting and polishing of the ZnSe substrate was removed by dry etching using BCl3 gas to 10 μm depth. The dry-etched ZnSe substrates exhibited smooth surface morphology...

  • Growth of ZnSe on Ge(100) substrates by molecular-beam epitaxy. Yamaguchi, Eiji; Takayasu, Ichiro; Minato, Tetsuo; Kawashima, Mitsuo // Journal of Applied Physics;8/1/1987, Vol. 62 Issue 3, p885 

    Investigates the epitaxial growth of zinc selenide on germanium substrates by molecular-beam epitaxy. Physical properties of the material; Details on the experiment; Discussion on the results of the study.

  • Defect characterization of etch pits in ZnSe based epitaxial layers. U’Ren, G. D.; Goorsky, M. S.; Meis-Haugen, G.; Law, K. K.; Miller, T. J.; Haberern, K. W. // Applied Physics Letters;8/19/1996, Vol. 69 Issue 8, p1089 

    Three distinct etch pit features in ZnSe based epitaxial layers have been identified. The features were observed with optical dark field microscopy and confirmed to be pits using scanning electron microscopy. Using transmission electron microscopy, we associated different etch pits with...

  • Spontaneous formation and photoluminescence of ZnSe dot arrays. Zhang, B.P.; Wang, W.X. // Applied Physics Letters;12/8/1997, Vol. 71 Issue 23, p3370 

    Examines the formation of zinc selenide quantum dot arrays (QDA) on gallium arsenide surfaces. Usage of atomic force microscope; Dependence of QDA emission on temperature; Stability of QDA emission at high excitations.

  • Molecular beam epitaxy of p-type conducting ZnSe and ZnSSe by simple nitrogen gas doping without.... Hishida, Yuji; Yoshie, Tomoyuki // Applied Physics Letters;7/10/1995, Vol. 67 Issue 2, p270 

    Investigates the molecular beam epitaxy of p-type conducting zinc selenide and zinc-sulfur selenide. Application of simple nitrogen gas doping technique without plasma activation; Factors affecting the p-type conduction in the N[sub 2]-gas doped zinc selenide; Fabrication of light emitting...

  • Nitrogen doping during atomic layer epitaxial growth of ZnSe. Zhu, Z.; Horsburgh, G. // Applied Physics Letters;12/25/1995, Vol. 67 Issue 26, p3927 

    Examines the growth and characterization of nitrogen doping during atomic layer epitaxial growth of zinc selenide. Use of in situ reflection high electron energy diffraction and ex situ capacitance-voltage profiling and photoluminescence spectroscopy; Effect of the Fermi level at a growing...

  • Radiative and nonradiative rates and deep levels in zinc selenide grown by molecular-beam epitaxy. Allen, J. W.; Reid, D. T.; Sibbett, W.; Sleat, W.; Zheng, Jia-Zhen; Hommel, D.; Jobst, B. // Journal of Applied Physics;8/1/1995, Vol. 78 Issue 3, p1731 

    Examines the growth of a series of chlorine-doped epitaxial layers of zinc-selenide by molecular-beam epitaxy. Effect of gallium arsenide buffer layer on light emission and deep-level concentrations; Significance of the experiments to the making of light-emitting diodes and lasers; Properties...

  • ZnSe/ZnSe0.92S0.08/GaAs single-crystal waveguides as visible modulators. Jupina, M. H.; Garmire, E. M.; Shibata, N.; Zembutsu, S. // Applied Physics Letters;12/31/1990, Vol. 57 Issue 27, p2894 

    Electro-optic and electroabsorptive modulations have been demonstrated in Schottky barriers in epitaxial ZnSe waveguides with cladding layers of ZnSeS grown single crystal on GaAs substrates. Using an argon laser we demonstrate guided-wave electro-optic modulation with voltages which are...

  • Photoassisted organometallic vapor-phase epitaxy of ZnSe: An ab initio molecular orbital study. Nakano, Takashi; Hirano, Tsuneo // Journal of Applied Physics;7/1/1995, Vol. 78 Issue 1, p251 

    Focuses on a study that determined the photoassisted organometallic vapor-phase epitaxy of zinc selenide. Photon irradiation effect on the surface reactions of source gas molecules; Calculation of the vertical photoexcitation energies for source gas molecules; Geometries of adsorbed source gas...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics