TITLE

Ultrafast graded-gap electron transfer optical modulator structure

AUTHOR(S)
Agrawal, Niraj; Wegener, Martin
PUB. DATE
August 1994
SOURCE
Applied Physics Letters;8/8/1994, Vol. 65 Issue 6, p685
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines an ultrafast graded-up electron transfer optical modulator structure. Electroabsorption and electrical behavior of the structure; Application of a femtosecond pump-probe geometry; Dependence of the electron escape time on bias voltage; Influence of charge separation on the intensity of optical saturation.
ACCESSION #
4221558

 

Related Articles

  • Light-emitting devices based on the real-space transfer of hot electrons. Luryi, Serge // Applied Physics Letters;4/22/1991, Vol. 58 Issue 16, p1727 

    Studies light-emitting devices based on the real-space transfer of hot electrons. Optoelectronic devices of varying degree of complexity proposed; Implementation of a class of vertical-cavity surface-emitting lasers in a number of heterostructures; Use of real-space lasers as logic devices.

  • Touch Technology. Philipp, Hal // Appliance Manufacturer;Sep2001, Vol. 49 Issue 9, p28 

    Focuses on the QMatrix charge-transfer technology developed by Quantum Research Group. Principle behind the technology; Comparison with other methods; Design of the product.

  • Resonant and nonresonant hyper-Rayleigh scattering of charge-transfer chromophores. Wang, C. H.; Woodford, J. N.; Zhang, C.; Dalton, L. R. // Journal of Applied Physics;4/15/2001, Vol. 89 Issue 8 

    The first molecular hyperpolarizabilities (β) of a series of charge-transfer nonlinear optical (NLO) chromophores are measured with the hyper-Rayleigh scattering (HRS) technique using two excitation wavelengths at 1064 and 1907 nm. The 1907 nm wavelength is the longest excitation wavelength...

  • Circuit precludes common-mode conduction. Herrick, Ken // EDN;2/4/2010, Vol. 55 Issue 3, p52 

    The article describes how crossover-delay circuits avoid common-mode conduction.

  • A Diver-Operated Optical and Physical Profiling System. Ronald, J.; Zaneveld, V.; Boss, Emmanuel; Moore, Casey M. // Journal of Atmospheric & Oceanic Technology;Aug2001, Vol. 18 Issue 8, p1421 

    Presents a study which described inherent-optical properties-charge-transfer device diver-portable instrumentation package. Set-up of the instruments; Data on horizontal sections near the sediment-water interface; Vertical profiles and observations near the sea surface; Vertical structure of...

  • High-voltage vertical FET gives silicon a competitive edge.  // Microwaves & RF;May2008 Supplement, p8 

    The article reports on the high-voltage vertical FET (HVVFET) which serves as a substitute for silicon. HVVi Semiconductors, Inc, has formulated a high-frequency (HVVFET) that render frequency bandwidth, voltage and power levels to radar and avionic uses. Moreover, HVVFET offers a great process...

  • Power inverter is bidirectional. Napier, Tom // EDN Europe;Aug2001, Vol. 46 Issue 8, p58 

    Focuses on the use of bidirectional function power inverters to balance battery voltages. Ways to obtain voltage in a circuit; Rate of input voltage in a symmetric gate-switching signal; Design of circuit used to generate negative output from positive battery supply.

  • Preparation and Electrochemical Performance of LiFePO4-based Electrode Using Three-Dimensional Porous Current Collector. Qiuming Wang; Dianlong Wang; Bo Wang // International Journal of Electrochemical Science;Sep2012, Vol. 7 Issue 9, p8753 

    Three-dimensional (3D) porous current collector was introduced to improve the high-rate performance of the cells based on lithium iron phosphate (LiFePO4). The 3D porous current collector was prepared by plating aluminium on the foam-type nickel substrate. The cells using the 3D porous current...

  • Injection currents in lamellar crystals of gallium telluride. Madatov, R. S.; Tagiyev, T. B.; Gabulov, L. A.; Abbasova, T. M. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2003, Vol. 6 Issue 3, p278 

    The results of researches of electrical properties and injection currents in lamellar samples of p-type gallium telluride with the purpose of determination of charge transfer mechanism both in the Ohm law regime and in the range of its violation in the wide temperature interval (77�300) K...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics