Atomic layer epitaxy of ZnS:Tb thin film electroluminescent devices

Kong, W.; Fogarty, J.
August 1994
Applied Physics Letters;8/8/1994, Vol. 65 Issue 6, p670
Academic Journal
Describes the fabrication of green light emitting zinc sulfide:terbium thin film electroluminescent devices. Use of atomic layer epitaxy; Effect of terbium doping profiles and concentrations on the emission characteristics; Impact of thermal annealing on emission lifetimes.


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