TITLE

Chemical vapor deposition of copper from Cu[sup +1] precursors in the presence of water vapor

AUTHOR(S)
Gelatos, A.V.; Marsh, R.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/15/1993, Vol. 63 Issue 20, p2842
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the chemical vapor deposition of copper from Cu[sup +1] precursors in the presence of water vapor. Impact of water vapor on deposition rate and nucleation time; Absence of defects in copper films deposited under optimum water conditions; Difference in resistivity decay with and without water.
ACCESSION #
4221547

 

Related Articles

  • Laser chemical vapor deposition of copper. Houle, F. A.; Jones, C. R.; Baum, T.; Pico, C.; Kovac, C. A. // Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p204 

    The first laser-induced deposition of copper has been demonstrated using a volatile copper coordination complex. The technique is characterized by reasonable rates and by the high quality of copper produced.

  • Photochemical generation and deposition of copper from a gas phase precursor. Jones, C. R.; Houle, F. A.; Kovac, C. A.; Baum, T. H. // Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p97 

    The photochemical generation and deposition of copper metal from a volatile copper coordination complex are described. Pulsed and cw ultraviolet light sources were used to induce deposition. The chemical compositions of the films are compared for all methods.

  • Chemical vapor deposition of copper with a new metalorganic source. Choi, E.S.; Park, S.K. // Applied Physics Letters;2/12/1996, Vol. 68 Issue 7, p1017 

    Investigates the copper deposition based on the synthesized metalorganic compound. Range of temperature utilized in the study; Relationship between resistivity and deposition temperature; Significance of the Auger depth for revealing the impurity contents of carbon and oxygen.

  • Chemical-vapor deposition of metallic copper film in the presence of oxygen. Hammadi, Z.; Lecohier, B.; Dallaporta, H. // Journal of Applied Physics;5/15/1993, Vol. 73 Issue 10, p5213 

    Presents a study that reported chemical-vapor deposition of copper using copper bis(acetylacetonate). Reason for the interest received by the metal copper; Resistance of the film relative to its room temperature resistance; Evolution of the reflectivity during the experiment.

  • Seam-free fabrication of submicrometer copper interconnects by iodine-catalyzed chemical vapor deposition. Pyo, Sung Gyu; Kim, Sibum; Wheeler, D.; Moffat, T. P.; Josell, D. // Journal of Applied Physics;1/15/2003, Vol. 93 Issue 2, p1257 

    Kinetic parameters from studies of deposition on planar deposits are used to predict superconformal filling of fine features during iodine-catalyzed chemical vapor deposition. The mechanism behind the superconformal filling is described and the metrology required to predict it is identified and...

  • Combined experimental and modeling studies of laser-assisted chemical vapor deposition of copper from copper(I)-hexafluoroacetylacetonate trimethylvinylsilane. Han, Jaesung; Jensen, Klavs F. // Journal of Applied Physics;2/15/1994, Vol. 75 Issue 4, p2240 

    Presents a study that described laser-assisted chemical vapor deposition of copper from copper-hexafluoroacetylacetonate trimethylvinylsilane onto silicon and metal substrates. Deposition process; Use of an argon ion laser; Relationship between operating parameters and the materials properties...

  • Copper diffusion in amorphous thin films of 4% phosphorus-silicate glass and hydrogenated silicon.... Gutta, D.; Verruga, K. // Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2178 

    Examines the diffusion of copper metal in amorphous thin films. Growth of thin films on oxidized silicon wafers by chemical vapor deposition technique; Application of copper radiotracer diffusion techniques in thin films; Description of the copper diffusion coefficients; Consideration of copper...

  • Low-pressure chemical vapor deposition of copper: Dependence of the selectivity on the water vapor added to a hydrogen or helium carrier gas. Lecohier, B.; Calpini, B.; Philippoz, J.-M.; van den Bergh, H. // Journal of Applied Physics;9/1/1992, Vol. 72 Issue 5, p2022 

    Deals with a study which examined the selectivity of copper deposition from copper (II) bis-hexafluoroacetylacetonate on SiO[sub2] patterned with a platinum seeding layer. Condition of the copper film on platinum; Way in which the selectivity of the copper deposition was improved; Processes in...

  • Formation of copper silicides from Cu(100)/Si(100) and Cu(111)/Si(111) structures. Chang, Chin-An // Journal of Applied Physics;1/1/1990, Vol. 67 Issue 1, p566 

    Focuses on a study which discussed the reaction between copper and silicon using differently oriented silicon and copper. Impact of deposition by electron-beam evaporation on copper films; Reason for using an interface bonding model; Manner of depositing copper films.

  • Atomistic simulation of the vapor deposition of Ni/Cu/Ni multilayers: Incident adatom angle effects. Zhou, X. W.; Wadley, H. N. G. // Journal of Applied Physics;1/1/2000, Vol. 87 Issue 1, p553 

    Explores the effects of incident adatom angle upon the atomic scale structure of Nickel/Copper/Nickel multilayers grown by vapor deposition under controlled incident atom energy conditions. Roughening mechanisms; Intermixing mechanisms; Rotation rate behavior.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics