TITLE

Epitaxial growth of Cu (001) on Si (001): Mechanisms of orientation development and defect

AUTHOR(S)
Hashim, I.; Park, B.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/15/1993, Vol. 63 Issue 20, p2833
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the evolution of microstructure during ultrahigh vacuum ion beam sputter deposition of copper (001) at room temperature on hydrogen-terminated silicon (001). Confirmation of firm thickness during growth; Possibility of a kinetic barrier for silicide nucleation; Reduction of mosaic spread of the columnar-grained structure.
ACCESSION #
4221544

 

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