Epitaxial growth of Cu (001) on Si (001): Mechanisms of orientation development and defect

Hashim, I.; Park, B.
November 1993
Applied Physics Letters;11/15/1993, Vol. 63 Issue 20, p2833
Academic Journal
Describes the evolution of microstructure during ultrahigh vacuum ion beam sputter deposition of copper (001) at room temperature on hydrogen-terminated silicon (001). Confirmation of firm thickness during growth; Possibility of a kinetic barrier for silicide nucleation; Reduction of mosaic spread of the columnar-grained structure.


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