Oxygen isotopic exchange between an [sup 18]O[sup +] implanted Si layer and a natural SiO[sub 2]

Yupu Li; Kilner, J.A.
November 1993
Applied Physics Letters;11/15/1993, Vol. 63 Issue 20, p2812
Academic Journal
Examines the effect of silicon dioxide capping layer on the growing buried silicon dioxide layer. Implantation of a silicon wafer at a high temperature; Evidence of diffusional mixing of the oxygen isotopes; Employment of electronic signal gating to reduce crater edge effects.


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