TITLE

Structure of Ga[sub 0.47]In[sub 0.53]As epitaxial layers grown on InP substrates at different

AUTHOR(S)
Zakharov, N.D.; Liliental-Weber, Z.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/15/1993, Vol. 63 Issue 20, p2809
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the evolution of defect structures and surface reconstruction of Ga[sub 0.47]In[sub 0.53]As epitaxial layers grown on indium phosphide substrates at different temperatures. Growth of layers by molecular beam epitaxy; Explanation of surface pit formation kinetics; Proposal of an atomic model of cluster structure.
ACCESSION #
4221536

 

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