TITLE

Metastable SiGeC formation by solid phase epitaxy

AUTHOR(S)
Strane, J.W.; Steins, H.J.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/15/1993, Vol. 63 Issue 20, p2786
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the synthesis and characterization of SiGeC metastable alloys formed by solid phase epitaxial regrowth. Structure of epitaxial layers; Impact of carbon implantation on structural and electric defects; Determination of the implantation amorphization depth with ion channeling Rutherford backscattering spectroscopy.
ACCESSION #
4221528

 

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