Metastable SiGeC formation by solid phase epitaxy

Strane, J.W.; Steins, H.J.
November 1993
Applied Physics Letters;11/15/1993, Vol. 63 Issue 20, p2786
Academic Journal
Presents the synthesis and characterization of SiGeC metastable alloys formed by solid phase epitaxial regrowth. Structure of epitaxial layers; Impact of carbon implantation on structural and electric defects; Determination of the implantation amorphization depth with ion channeling Rutherford backscattering spectroscopy.


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