Reactive ion etching of gallium nitride in silicon tetrachloride plasmas

Adesida, I.; Mahajan, A.
November 1993
Applied Physics Letters;11/15/1993, Vol. 63 Issue 20, p2777
Academic Journal
Examines the reactive ion etching of gallium nitride in silicon tetrachloride plasmas. Similarity of etch rates for different gas mixtures; Impact of plasma voltage on etch rate; Etch profiles for structures of submicrometer dimensions; Importance of ion bombardment in the etching mechanism.


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