TITLE

Reactive ion etching of gallium nitride in silicon tetrachloride plasmas

AUTHOR(S)
Adesida, I.; Mahajan, A.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/15/1993, Vol. 63 Issue 20, p2777
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the reactive ion etching of gallium nitride in silicon tetrachloride plasmas. Similarity of etch rates for different gas mixtures; Impact of plasma voltage on etch rate; Etch profiles for structures of submicrometer dimensions; Importance of ion bombardment in the etching mechanism.
ACCESSION #
4221525

 

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