TITLE

Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRuO[sub 3])

AUTHOR(S)
Eom, C.B.; Van Dover, R.B.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/1/1993, Vol. 63 Issue 18, p2570
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents result of epitaxial ferroelectric heterostructures with strontium ruthenium oxide electrodes on strontium-titanium oxygen and silicon. Growth of structure in situ by 90 degrees off-axis sputtering; Manifestation of optimum conditions for growing epitaxial layers; Examination of electrical properties.
ACCESSION #
4221502

 

Related Articles

  • Size effects in ultrathin epitaxial ferroelectric heterostructures. Nagarajan, V.; Prasertchoung, S.; Zhao, T.; Zheng, H.; Ouyang, J.; Ramesh, R.; Tian, W.; Pan, X.Q.; Kim, D.M.; Eom, C.B.; Kohlstedt, H.; Waser, R. // Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5225 

    In this letter we report on the effect of thickness scaling in model PbZr0.2Ti0.8O3(PZT)/SrRuO3 heterostructures. Although theoretical models for thickness scaling have been widely reported, direct quantitative experimental data for ultrathin perovskite (<10 nm) films in the presence of real...

  • Molecular beam epitaxy of YMnO3 on c-plane GaN. Chye, Y.; Liu, T.; Li, D.; Lee, K.; Lederman, D.; Myers, T. H. // Applied Physics Letters;3/27/2006, Vol. 88 Issue 13, p132903 

    Epitaxial YMnO3 films were grown on (0001) GaN-on-sapphire templates using molecular beam epitaxy. The YMnO3 maintained the (0001) orientation with an in-plane YMnO3/GaN epitaxial relationship of (0001)∥(0001); [1100]∥[1120]. The YMnO3 was ferroelectric at room temperature with a...

  • Local epitaxial growth of ZrO[sub 2] on Ge (100) substrates by atomic layer epitaxy. Hyoungsub Kim; Chi On Chui; Saraswat, Krishna C.; McIntyre, Paul C. // Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2647 

    High-k dielectric deposition processes for gate dielectric preparation on Si surfaces usually result in the unavoidable and uncontrolled formation of a thin interfacial oxide layer. Atomic layer deposition of ∼55-Å ZrO[sub 2] film on a Ge (100) substrate using ZrCl[sub 4] and H[sub 2]O...

  • Epitaxial growth of yttria-stabilized zirconia films on silicon by ultrahigh vacuum ion beam sputter deposition. Legagneux, P.; Garry, G.; Dieumegard, D.; Schwebel, C.; Pellet, C.; Gautherin, G.; Siejka, J. // Applied Physics Letters;10/17/1988, Vol. 53 Issue 16, p1506 

    Yttria-stabilized zirconia (YSZ) films have been grown on Si (100) substrates by ion sputter deposition using ultrahigh vacuum system with in situ diagnostic equipment. Epitaxial conditions of YSZ (100) films were achieved between 700 and 800 °C by using an oxygen partial pressure around...

  • Polydomain configuration in epitaxial Pb0.5Sr0.5TiO3/La0.5Sr0.5CoO3 heterostructures. Plekh, M.; Narkilahti, J.; Levoska, J.; Tyunina, M. // Applied Physics Letters;11/15/2010, Vol. 97 Issue 20, p202909 

    In epitaxial heterostructures Pb0.5Sr0.5TiO3/La0.5Sr0.5CoO3/MgO(001) with a large lattice mismatch, ferroelectric domains and properties were experimentally studied. In 130 nm thick polydomain tetragonal Pb0.5Sr0.5TiO3 films, random arrays of ∼0.1-0.5 μm sized a- and c-domains are found....

  • Lead Titanate Ferroelectric Films on Single-Crystal Silicon. Sidorkin, A. S.; Sigov, A. S.; Khoviv, A. M.; Yatsenko, O. B.; Logacheva, V. A. // Physics of the Solid State;Apr2002, Vol. 44 Issue 4, p774 

    This paper reports on the results of investigations into the phase transformations observed in Pb/Ti/Si and Ti/Pb/Si thin-film heterostructures upon layer-by-layer magnetron sputtering of lead and titanium onto a single-crystal silicon substrate and subsequent annealing in an oxygen atmosphere....

  • Epitaxial YBa2Cu3O7-δ /BaxSr1-xTiO3 heterostructures on silicon-on-sapphire for tunable microwave components. Boikov, Yu. A.; Ivanov, Z. G.; Kiselev, A. N.; Olsson, E.; Claeson, T. // Journal of Applied Physics;10/1/1995, Vol. 78 Issue 7, p4591 

    Presents a study in which the epitaxial trilayer heterostructures of a combination of superconducting and ferrolectric materials were grown on silicon-on-sapphire buffered by a double layer of CeO[sub2]/Y-ZrO[sub2]. Information on the dielectric permittivity and the high frequency loss tan ...

  • Piezoelectric response of epitaxial Pb(Zr[sub 0.2]Ti[sub 0.8])O[sub 3] films measured by scanning tunneling microscopy. Kuffer, O.; Maggio-Aprile, I.; Triscone, J.-M.; Fischer, O&slash;.; Renner, Ch. // Applied Physics Letters;9/11/2000, Vol. 77 Issue 11 

    We report on scanning tunneling microscopy measurements of the piezoelectric response in ferroelectric heterostructures grown by off-axis rf magnetron sputtering. The samples are composed of a single-crystalline ferroelectric film of Pb(Zr[sub 0.2]Ti[sub 0.8])O[sub 3] deposited on a conducting...

  • Gate leakage suppression and contact engineering in nitride heterostructures. Wu, Yuh-Renn; Singh, Madhusudan; Singh, Jasprit // Journal of Applied Physics;11/1/2003, Vol. 94 Issue 9, p5826 

    We present a self-consistent approach to examine current flow in a general metal–polar heterostructure junction. The approach is applied to examine properties of three classes of junctions that are important in devices: (i) GaN/AlGaN structures that are used in nitride heterojunction...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics