Dislocation generation mechanisms for GaP on Si grown by metalorganic chemical vapor deposition

Soga, Tetsuo; Jimbo, Takashi
November 1993
Applied Physics Letters;11/1/1993, Vol. 63 Issue 18, p2543
Academic Journal
Describes the dislocation generation mechanism for gallium phosphide on silicon substrates using metalorganic chemical vapor deposition. Details on the gallium phosphide growth on silicon substrates; Kinds of high resolution transmission electron microscopy; Discussion on the formation of contrasting dislocations.


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