TITLE

Interface structure and chemical bondings in Al/S-passivated GaAs(111)

AUTHOR(S)
Sugiyama, M.; Maeyama, S.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/1/1993, Vol. 63 Issue 18, p2540
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the structures and chemical states of sulfur atoms after aluminum depositions on sulfur treated gallium arsenide and beryllium. Use of x-ray standing wave (XSW) and synchrotron radiation photoemission spectroscopy (SRPES); Indication of XSW result; Significance of sulfur atom position; Manifestation of SRPES on gallium atoms.
ACCESSION #
4221492

 

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