TITLE

Photoluminescence of hydrogenated GaAs/AlGaAs quantum wells grown by metalorganic vapor phase

AUTHOR(S)
Botha, J.R.; Leitch, A.W.R.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/1/1993, Vol. 63 Issue 18, p2534
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the effect of hydrogenation on the photoluminescence of undoped gallium arsenide/aluminum gallium arsenide single quantum well (QW) grown by metalorganic vapor phase epitaxy. Growth of QW structure at 700 degrees Celsius; Discussion on the influence of hydrogenation as a function of temperature; Details on the hydrogenation performance.
ACCESSION #
4221490

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics