Model dielectric functions for native oxides on compound semiconductors

Zollner, Stefan
November 1993
Applied Physics Letters;11/1/1993, Vol. 63 Issue 18, p2523
Academic Journal
Presents simple eight-parameter analytical models based on critical-point line shapes for oxide layers on six III-V semiconductors. Description of measured dielectric constants of oxide overlayers; Choice of suitable set of parameters for the oxide on indium arsenide; Manifestation of the dielectric function model.


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