TITLE

Ozone-induced rapid low temperature oxidation of silicon

AUTHOR(S)
Kazor, A.; Boyd, Ian W.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/1/1993, Vol. 63 Issue 18, p2517
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the efficient ozone-assisted oxidation of silicon at low temperature. Similarity of the oxide growth rate to oxygen ambience; Factors inducing a range of reaction enhancement; Manifestation of atomic oxygen diffusion.
ACCESSION #
4221484

 

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