Ozone-induced rapid low temperature oxidation of silicon

Kazor, A.; Boyd, Ian W.
November 1993
Applied Physics Letters;11/1/1993, Vol. 63 Issue 18, p2517
Academic Journal
Demonstrates the efficient ozone-assisted oxidation of silicon at low temperature. Similarity of the oxide growth rate to oxygen ambience; Factors inducing a range of reaction enhancement; Manifestation of atomic oxygen diffusion.


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