Schottky barrier photodetector based on Mg-doped p-type GaN films

Khan, M. Asif; Kuznia, J.N.
November 1993
Applied Physics Letters;11/1/1993, Vol. 63 Issue 18, p2455
Academic Journal
Describes the fabrication and characterization of Schottky barrier photodetector based on p-type of gallium nitride films. Growth of films over basal plane sapphire substrates; Measurement of current-voltage characteristics; Evaluation of fabricated Schottky barriers; Specification on the photovoltaic detectors.


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