Beryllium delta doping studies in InP and Ga[sub 0.47]In[sub 0.53]As during metalorganic

Ritter, Dan; Hamm, R.A.
September 1993
Applied Physics Letters;9/13/1993, Vol. 63 Issue 11, p1543
Academic Journal
Presents the delta doping study of beryllium (Be) in indium phosphide (InP) and Ga[sub 0.47]In[sub 0.53]As semiconductors during metalorganic molecular beam epitaxy. Removal of Be atom from the surface; Account on the upper limit for delta doping of InP and GaInAs; Duration of the growth interruption.


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