Mapping of mobile charges on insulator surfaces with the electrostatic force microscope

Domansky, K.; Leng, Y.
September 1993
Applied Physics Letters;9/13/1993, Vol. 63 Issue 11, p1513
Academic Journal
Examines the migration of surface ions on insulator surfaces. Use of electrostatic force microscope to image the spatial distribution of surface ions; Distribution of surface ions by the fringing fields of an open-gate field-effect transistor; Simultaneous imaging of the surface charge distribution and topography on a micrometer scale.


Related Articles

  • Hysteretic transfer characteristics of double-walled and single-walled carbon nanotube field-effect transistors. Yuan, Shaoning; Zhang, Qing; Shimamoto, Daisuke; Muramatsu, Hiroyuki; Hayashi, Takuya; Kim, Yoong Ahm; Endo, Morinobu // Applied Physics Letters;10/1/2007, Vol. 91 Issue 14, p143118 

    In both double-walled carbon nanotube field-effect transistors (DWCNT-FETs) and single-walled carbon nanotube field-effect transistors (SWCNT-FETs), “clockwise” hysteretic transfer characteristics are observed. These characteristics can be attributed to mobile ions or charged...

  • Charge-imaging field-effect transistor. Chen, L. H.; Topinka, M. A.; LeRoy, B. J.; Westervelt, R. M.; Maranowski, K. D.; Gossard, A. C. // Applied Physics Letters;8/20/2001, Vol. 79 Issue 8, p1202 

    Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. These FETs have quantum point contact geometries to minimize the size of the channel and to improve the spatial resolution. The charge noise...

  • Ionic mobility and electrical transport in 45ZrF4 · 35BiF3 · 20MF (M - Li, Na, K) glasses studied by NMR and impedance spectroscopy. Kavun, V.; Merkulov, E.; Sinebryukhov, S.; Gnedenkov, S.; Goncharuk, V. // Inorganic Materials;Mar2009, Vol. 45 Issue 3, p315 

    The ionic mobility and electrical transport in 45ZrF4 · 35BiF3 · 20MF (M - Li, Na, K) glasses have been studied by 7Li, 19F, and 23Na NMR and impedance spectroscopy at temperatures from 200 to 500 K. In the range 400–440 K, the main kinds of ionic mobility in these glasses are local...

  • Scanning Kelvin probe microscopy on organic field-effect transistors during gate bias stress. Mathijssen, S. G. J.; Cölle, M.; Mank, A. J. G.; Kemerink, M.; Bobbert, P. A.; de Leeuw, D. M. // Applied Physics Letters;5/7/2007, Vol. 90 Issue 19, p192104 

    The reliability of organic field-effect transistors is studied using both transport and scanning Kelvin probe microscopy measurements. A direct correlation between the current and potential of a p-type transistor is demonstrated. During gate bias stress, a decrease in current is observed, that...

  • High-temperature stability of Nb/GaAs and NbN/GaAs interfaces. Ding, J.; Lee, B.; Gronsky, R.; Washburn, J.; Chin, D.; Van Duzer, T. // Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p135 

    The interface stabilities of Nb/GaAs and NbN/GaAs contacts at temperatures up to 700 °C for Nb/GaAs and 850 °C for NbN/GaAs have been investigated by transmission electron microscopy and x-ray diffractometry techniques. Results reveal that a Nb/GaAs reaction takes place at temperatures...

  • Evidence of Schottky emission in scanning tunneling microscopes operated in ambient air. Jahanmir, J.; West, P. E.; Rhodin, T. N. // Applied Physics Letters;6/13/1988, Vol. 52 Issue 24, p2086 

    We demonstrate that the electron transfer mechanism in scanning tunneling microscopes operated in air follows the Schottky equation. Schottky emission dominates electron transfer mechanism in microscopes operated in air because of low effective potential barrier heights. This is supported by...

  • Potentiometry of an operating organic semiconductor field-effect transistor. Seshadri, Kannan; Frisbie, C. Daniel // Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p993 

    The potential profile across the channel of an operating sexithiophene-based field-effect transistor (FET) was investigated using an atomic force microscope with a conducting probe. A high impedance electrometer recorded the probe potential when it was placed in contact at fixed points with the...

  • The electrical and dielectrical behavior of n-conducting perylene tetracarboxylic diimide derivatives. Lehmann, Daniel; Zahn, Dietrich R. T. // Applied Physics A: Materials Science & Processing;Apr2009, Vol. 95 Issue 1, p203 

    A comparison of the electrical characteristics of organic field-effect transistors (OFETs) based on derivatives of the electron-conductor perylene tetracarboxylic diimide (PTCDI) in top-contact configuration is presented. The derivatives used are...

  • Two-dimensional dopant concentration profiles from ultrashallow junction metal-oxide-semiconductor field-effect transistors using the etch/transmission electron microscopy method. Yoo, K. D.; Marsh, C. D.; Booker, G. R. // Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2687 

    The etch/transmission electron microscopy (TEM) method for obtaining one dimensional (1D) and two dimensional (2D) dopant concentration profiles has been developed and applied to n[sup +]/p silicon metal-oxide-semiconductor field-effect transistor (MOSFET) structures fabricated using 0.25 μm...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics