Passivation and depassivation of silicon dangling bonds at the Si/SiO[sub 2] interface by atomic

Cartier, E.; Stathis, J.H.
September 1993
Applied Physics Letters;9/13/1993, Vol. 63 Issue 11, p1510
Academic Journal
Examines the passivation and depassivation of silicon (Si) dangling bonds at the Si/SiO[sub 2] interface by atomic hydrogen. Use of electron paramagnetic resonance; Account on the magnetic field modulation amplitude; Comparison between the buildup of interface state density at midgap and during repetitive hydrogen exposures.


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