TITLE

Passivation and depassivation of silicon dangling bonds at the Si/SiO[sub 2] interface by atomic

AUTHOR(S)
Cartier, E.; Stathis, J.H.
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/13/1993, Vol. 63 Issue 11, p1510
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the passivation and depassivation of silicon (Si) dangling bonds at the Si/SiO[sub 2] interface by atomic hydrogen. Use of electron paramagnetic resonance; Account on the magnetic field modulation amplitude; Comparison between the buildup of interface state density at midgap and during repetitive hydrogen exposures.
ACCESSION #
4221437

 

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