Voltage-current characteristics of a high T[sub c] superconducting field effect device

Xi, X.X.; Doughty, C.
November 1992
Applied Physics Letters;11/9/1992, Vol. 61 Issue 19, p2353
Academic Journal
Measures the source-drain voltage-current characteristics of a high temperature superconducting field effect device. Similarities of V-I curves to those of a metal-oxide-semiconductor field-effect transistor; Exhibition of lower dissipation by the superconducting channel; Thickness and high critical current density of the device.


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