Large temperature changes induced by molecular beam epitaxial growth on radiatively heated

Shanabrook, B.V.; Waterman, J.R.
November 1992
Applied Physics Letters;11/9/1992, Vol. 61 Issue 19, p2338
Academic Journal
Examines large temperature changes induced by molecular beam epitaxial growth of indium arsenide, gallium antimonide, aluminum antimonide, and gallium arsenide (GaAs) films. Decrease of energy gap of the GaAs substrate; Difficulty of observing the changes; Feasibility of the optical absorption measurements.


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