Model for conductance in dry-etch damaged n-GaAs structures

Rahman, M.; Johnson, N.P.
November 1992
Applied Physics Letters;11/9/1992, Vol. 61 Issue 19, p2335
Academic Journal
Presents a model for calculating conductances in dry-etch damaged structures. Manifestation of expression defect distribution; Presence of sidewall damage in dry-etched wires; Creation of defects at significant rate at sidewalls.


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