Al/Si/AlGaAs/GaAs Schottky barriers by molecular beam epitaxy

Miller, T.J.; Nathan, M.I.
November 1992
Applied Physics Letters;11/9/1992, Vol. 61 Issue 19, p2332
Academic Journal
Examines the growth of aluminum/silicon/aluminum gallium arsenide/gallium arsenide Schottky diode structures by molecular beam epitaxy. Determination of barrier height behavior as a function of aluminum mole fraction; Fabrication of aluminum dots on the surface; Effect of the conduction band discontinuity between the silicon and gallium arsenide.


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