Oxygen based electron cyclotron resonance etching of semiconducting homoepitaxial diamond films

Grot, S.A; Ditizio, R.A.
November 1992
Applied Physics Letters;11/9/1992, Vol. 61 Issue 19, p2326
Academic Journal
Demonstrates an oxygen-based electron cyclotron resonance plasma etching of boron doped homoepitaxial diamond films. Provision of a uniform and reproducible etching procedure; Formation of smooth damage-free etched surfaces; Determination of the etch rate attained under such conditions.


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