Buffer-induced modulation of carrier density and mobility in a selectively doped heterostructure

Reynolds Jr., C.L.; Vuong, H.H.
November 1992
Applied Physics Letters;11/9/1992, Vol. 61 Issue 19, p2308
Academic Journal
Examines variations in carrier sheet concentration and mobility of two-dimensional electron gas as a function of thickness of gallium arsenide buffer layer deposited on the substrate. Relation of results to intersubband scattering; Mechanism responsible for the modulation of the carrier density; Interaction between the buffer and silicon impurity.


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