TITLE

Annealing of recombination centers in the deposition and light induced high defect amorphous

AUTHOR(S)
Jong-Hwan Yoon; Yoon-Zik Lee
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/9/1992, Vol. 61 Issue 19, p2305
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines annealing behaviors of deposition and light induced recombination centers in undoped hydrogenated amorphous silicon. Measurement of the steady-state photoconductivity; Similarity of the two annealing activation energies; Designation of the spin-active dangling bonds as the dominant recombination center.
ACCESSION #
4221396

 

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