Annealing of recombination centers in the deposition and light induced high defect amorphous

Jong-Hwan Yoon; Yoon-Zik Lee
November 1992
Applied Physics Letters;11/9/1992, Vol. 61 Issue 19, p2305
Academic Journal
Examines annealing behaviors of deposition and light induced recombination centers in undoped hydrogenated amorphous silicon. Measurement of the steady-state photoconductivity; Similarity of the two annealing activation energies; Designation of the spin-active dangling bonds as the dominant recombination center.


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