Large area, low voltage, transit time limited InGaAs metal semiconductor metal photodetectors

Ralph, Stephen E.; Hargis, M.C.
November 1992
Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2222
Academic Journal
Demonstrates the efficacy of a method for reducing the effects of charge associated with the InP substrates-InGaAs interface. Performance of InGaAs metal-semiconductor-metal-photodetectors; Parasitic capacitance and carrier concentration in the absorbing InGaAs layer; Complete depletion at low bias results to uniform field strength.


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