Electron mobility measured in undoped InGaAs epitaxial layer grown on n-InP substrate

Somogyi, K.; Pfeifer, J.
November 1992
Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2220
Academic Journal
Focuses on the use of angle dependent magnetoresistance measurements in determining electron mobility in an epitaxial layer grown on a highly conductive substrates. Measurement of the electron mobility in undoped InGaAs epitaxial layers; Effect of the low resistance of the InGaAs layer; Importance of carrier mobility in charterizing compound semiconductor quality.


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