Ge profile from the growth of SiGe buried layers by molecular beam epitaxy

Godbey, D.J.; Ancona, M.G.
November 1992
Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2217
Academic Journal
Examines the germanium (Ge) concentration profile of thin Si/SiGe heterostructures using elemental source molecular epitaxy. Interpretation of X-ray photoelectron spectroscopy measurements through kinetic simulation; Factors causing Ge depletion at the leading interface; Effects of Ge rich monolayer on the silicon cap layer.


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