TITLE

Compensation processes in nitrogen doped ZnSe

AUTHOR(S)
Hauksson, I.S.; Simpson, J.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2208
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the compensation process in nitrogen doped zinc selenide grown by molecular beam epitaxy. Observation of independent donor-acceptor pair emission processes; Existence of deep compensation donor with binding energy; Proposal on compensating donor as complex involving a native defect; Changes in the carrier concentration profile.
ACCESSION #
4221367

 

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