Compensation processes in nitrogen doped ZnSe

Hauksson, I.S.; Simpson, J.
November 1992
Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2208
Academic Journal
Examines the compensation process in nitrogen doped zinc selenide grown by molecular beam epitaxy. Observation of independent donor-acceptor pair emission processes; Existence of deep compensation donor with binding energy; Proposal on compensating donor as complex involving a native defect; Changes in the carrier concentration profile.


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