TITLE

Complete strain relief of heteroepitaxial GaAs on silicon

AUTHOR(S)
Burns, Geoffrey F.; Fonstad, Clifton G.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2199
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Produces high quality strain-free heteroepitaxial GaAs-on-Si by annealing chemically separated gallium arsenide epitaxial layers grown by molecular beam epitaxy. Development of process sequence; Elimination of residual strain; Basis for monolithic integration of high quality strain free (Al,Ga)As electrical and optical devices with silicon circuitry.
ACCESSION #
4221364

 

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