TITLE

Photoreflectance study of AlAs/GaAs gradient period superlattice

AUTHOR(S)
Hongwei Xu; Xiaochuan Zhou
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2193
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Explores the possibility of constructing a graded band-gap barrier by gradient period (AlAs)[sub n]/(GaAs)[sub m] superlattice. Attribution of oscillation to oscillation induced by quasielectric field in the gradient period superlattice regions; Formation of graded band gap; Determination of the band gap in the graded region.
ACCESSION #
4221362

 

Related Articles

  • Photocurrent self-oscillations in a direct-gap GaAs-AlAs superlattice. Ohtani, Naoki; Hosoda, Makoto // Applied Physics Letters;1/20/1997, Vol. 70 Issue 3, p375 

    Investigates the photocurrent self-oscillations in megahertz regime in a direct energy gap gallium arsenide-aluminum arsenide superlattice. Appearance of photocurrent oscillations; Dependence of frequency distribution of oscillation amplitudes on the applied voltage; Connection of the existence...

  • Interband absorption in alpha-Sn/Ge short-period superlattices. Olajos, Janos; Wegscheider, Werner // Applied Physics Letters;12/28/1992, Vol. 61 Issue 26, p3130 

    Measures the band gap energy of Sn[sub 1]/Ge[sub m] superlattices. Determination of absorption coefficient; Dependence of the band gaps on temperature; Energy range of the band gap energies.

  • Electroluminescence at room temperature of a Si[sub n]Ge[sub m] strained-layer superlattice. Engvall, Jesper; Olajos, Janos; Grimmeiss, Hermann G.; Presting, Hartmut; Kibbel, Horst; Kasper, Erich // Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p491 

    Describes the electroluminescence of Si[sub n]Ge[sub m] strained-layer superlattice. Effect of short circuit photocurrent spectroscopy, voltage- and current-intensity measurements; Temperature dependence of the band gap energy; Involvement of interband recombination transition in...

  • Naturally formed In[sub x]Al[sub 1-x]As/In[sub y]Al[sub 1-y]As vertical superlattices. Sung Won Jun; Lee, J.H. // Applied Physics Letters;6/10/1996, Vol. 68 Issue 24, p3443 

    Examines the naturally formed In[sub x]Al[sub 1-x]As/In[sub y]Al[sub 1-y]As vertical superlattices. Formation in the layers of nominal composition In[sub 0.52]Al[sub 0.48]As grown on exactly (001)-oriented indium phosphide substrates; Occurrence of CuPt type ordering; Band gap reduction in the...

  • Infrared optical characterization of InAs/Ga1-xInxSb superlattices. Miles, R. H.; Chow, D. H.; Schulman, J. N.; McGill, T. C. // Applied Physics Letters;8/20/1990, Vol. 57 Issue 8, p801 

    InAs/Ga1-xInxSb superlattices have been examined by photoluminescence, photoconductivity, and infrared optical transmission. Samples display clear photoconductive thresholds at energies in agreement with band gaps derived from photoluminescence. Far-infrared energy gaps (8–14 μm and...

  • Band gap and activation energy in amorphous silicon doping-modulated superlattices. Zhang, D. H.; Haneman, D. // Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1392 

    It has been found that both the activation energy and optical energy gap of amorphous silicon doping-modulated nipi... superlattices vary consistently with i layer thickness. There is a pronounced maximum at an i layer thickness of approximately 14 nm. The occurrence of this maximum, and the...

  • Electronic structures of strained-layer superlattices (Si)2n/(Si1-xGex)2n (100) with n=1–10. Shen, Dingli; Zhang, Kaiming; Xie, Xide // Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p717 

    The empirical tight-binding method is used to calculate the electronic structures of type II strained-layer semiconductor superlattices (Si)2n /(Si1-x Gex )2n (100) with n=1–10. The effects of lattice-constant variation on nearest neighbor interactions have been taken into account. The...

  • Electric-field-independent band gap superpositioning at 1.3 mum in an InGaAs--InAlAs.... Fritz, I.J.; Hafich, M.J. // Applied Physics Letters;10/20/1997, Vol. 71 Issue 16, p2352 

    Reports on the electric-field dependent band-gap and near-gap absorption coefficient of a strained-layer superlattices (SLS). Growth of SLS by molecular beam epitaxy; Wavelength of the band-gap energy; Computation for the positions of heavy-hole and light-hole ground states.

  • Band-gap narrowing in ordered and disordered semiconductor alloys. Wei, S.-H.; Zunger, Alex // Applied Physics Letters;2/12/1990, Vol. 56 Issue 7, p662 

    Either spontaneous or artificial ordering of semiconductor alloys into CuAu-like, chalcopyrite, or CuPt-like structures is predicted to be accompanied by a reduction in the direct band gaps relative to the average over the binaries. In this letter calculated results are presented for seven III-V...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics