TITLE

Gate quality Si[sub 3]N[sub 4]/Si/n-In[sub 0.53]Ga[sub 0.47] As metal-insulator-semiconductor

AUTHOR(S)
Wang, Z.; Mui, D.S.L.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1826
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the gate quality Si[sub 3]n[sub 4]/Si/n-In[sub 0.53]Ga[sub 0.47] as metal-insulator-semiconductor capacitors. Formation of the capacitors through in situ nitride and silicon layer deposition; Determination of interface trap density; Details on the frequency dispersion, hysteresis and band voltage of the capacitors.
ACCESSION #
4221326

 

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