TITLE

N- and P-type dopant profiles in distributed Bragg reflector structures and their effect on

AUTHOR(S)
Kopf, R.F.; Schubert, E.F.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1820
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the dopant profiles in aluminum arsenide/gallium arsenide structures grown by molecular beam epitaxy. Accumulation of beryllium (Be) on GaAs side of heterointerfaces; Effect of Bragg reflector structures on electrical resistance; Attribution of Be segregation and diffusion to high electrical resistance.
ACCESSION #
4221324

 

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