TITLE

DX center electron occupancy under hydrostatic pressure in Si-doped

AUTHOR(S)
Romero, A.L.; Calleja, E.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1811
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes the DX center electron occupancy in silicon-doped aluminum gallium arsenide (AlGaAs) alloys. Addition of indium to silicon-doped AlGaAs alloys; Attribution of the hydrostatic pressure to the shifts in silicon-DX centers; Determination of band-gap energy and DX center depth.
ACCESSION #
4221321

 

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