TITLE

Reflection high-energy electron diffraction study of the GaAs:Si:GaAs system

AUTHOR(S)
Fahy, M.R.; Ashwin, M.J.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1805
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the deposition of silicon on gallium arsenide through reflection high-energy electron diffraction. Factors contributing to the reconstruction of surface structures; Overgrowth of gallium arsenide through molecular beam epitaxy; Maintenance of arsenic flux during the deposition stages.
ACCESSION #
4221319

 

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