Precursor for Si atomic layer epitaxy: Real time adsorption studies on Si(100)

Koleske, D.D.; Gates, S.M.
October 1992
Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1802
Academic Journal
Examines the adsorption of chlorosilanes on silicon substrate by atomic layer epitaxy (ALE). Contention on dichlorosilane as suitable precursor for silicon ALE; Use of time-of-flight scattering and recoiling spectroscopy to monitor the surface coverages of hydrogen and chlorine; Factors affecting chlorosilane adsorption.


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