TITLE

Precursor for Si atomic layer epitaxy: Real time adsorption studies on Si(100)

AUTHOR(S)
Koleske, D.D.; Gates, S.M.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1802
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the adsorption of chlorosilanes on silicon substrate by atomic layer epitaxy (ALE). Contention on dichlorosilane as suitable precursor for silicon ALE; Use of time-of-flight scattering and recoiling spectroscopy to monitor the surface coverages of hydrogen and chlorine; Factors affecting chlorosilane adsorption.
ACCESSION #
4221318

 

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